▎ 摘　　要

NOVELTY - Preparation of indium arsenide nanoparticles comprises mixing trioctylphosphine oxide and octadecylene, heating, mixing indium acetylacetonate, indium chloride and/or indium acetate with triphenylarsine and benzyl ether, adding to prepared mixed solution, continuously heating the mixture, adding oil amine, and reacting. USE - The method is for preparation of indium arsenide nanoparticles used for photoelectric detector (claimed). ADVANTAGE - The method is simple, mild condition, repeatable oil phase reflux method to prepare indium arsenide nano material. The crystal obtained by the method has good monodispersity, uniform appearance, uniform shape and small optical band gap. The InAs nano-particle has good photovoltaic response in visible and infrared wave band. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparation of a photodetector comprising coating indium arsenide nanoparticles on surface of substrate, and laying conductive transparent layer.