▎ 摘　　要

NOVELTY - Modified graphene (I) comprising at least one sp3 orbital is claimed. USE - (I) is useful in electronic component or device, magneto-electronic component or device, wafer, ferromagnetic semiconductor, and field effect transistor (FET). (I) is useful for fabrication and/or definition of FET, dielectrics, interconnects, or a ferromagnetic semiconductor. (I) is useful as a room temperature ferromagnetic semiconductor. (I) is useful in spintronics device. (I) is useful to enable room temperature anisotropic magnetoresistance in samples. The method is useful for: making a patterned graphene; and controlling degree of saturation of (I) (all claimed). (I) is useful in large-scale fabrication of electronic epitaxial graphene devices and integrated circuits. (I) is useful for controlling: local electronic structure of the graphene sheet; and modification of the hybridization of the carbon atoms from sp2-sp3 states by chemical addition of organic functional groups. (I) is useful for generating wires (interconnects), semiconductors (transistors), dielectrics, and insulators. ADVANTAGE - (I) has higher resistance than pristine graphene. (I) has larger band gaps than a partially unsaturated modified graphene having well defined conjugated pathways. (I) controls electronic and magnetic properties. The method does not require physical removal of areas of graphene or its oxidation, to generate the full complement of electronic devices necessary to produce functional electronic circuitry. The method is reliable, reproducible and cost effective. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a composition comprising (I); (2) a method of making (I) comprising covalently attaching a functional group to a least one carbon atom of a graphene; (3) a method of making a patterned graphene comprising introducing functional groups to graphene to provide semiconducting and or insulating regions of the patterned graphene; and (4) a method to control the degree of saturation of (I) comprising selecting a functional group having a size suitable for forming (I) having a preselected degree of saturation, and functionalizing graphene with the functional group to form (I) having the preselected degree of saturation.