• 专利标题:   Forming graphene layer on surface of substrate, comprises gradually heating substrate until sublimation of silicon of first row of atoms of free surface of silicon-carbide film, where free surface of silicon layer is stepped.
  • 专利号:   FR2980787-A1
  • 发明人:   OUERGHI A
  • 专利权人:   CENT NAT RECH SCI
  • 国际专利分类:   B82Y040/00, C01B031/02, C30B029/36
  • 专利详细信息:   FR2980787-A1 05 Apr 2013 C01B-031/02 201326 Pages: 16 French
  • 申请详细信息:   FR2980787-A1 FR058820 30 Sep 2011
  • 优先权号:   FR058820

▎ 摘  要

NOVELTY - The method comprises gradually heating a substrate (300) until sublimation of silicon of a first row of atoms of a free surface (302) of a silicon-carbide film (301) to form a graphene layer (303) on the free surface, where the free surface of the silicon layer is stepped and the substrate is heated under a controlled flow of an inert gas. The free surface comprises steps (305) separated by risers, which have virtually identical heights, where the steps have virtually identical treads. Each step extends approximately parallel to a support on which the substrate rests. USE - The method is useful for forming a graphene layer on a surface of a substrate (claimed). ADVANTAGE - The method is capable of forming the graphene layer with better quality and uniform thickness in a simple manner. DETAILED DESCRIPTION - The method comprises gradually heating a substrate (300) until sublimation of silicon of a first row of atoms of a free surface (302) of a silicon-carbide film (301) to form a graphene layer (303) on the free surface, where the free surface of the silicon layer is stepped, and the substrate is heated under a controlled flow of an inert gas. The free surface comprises steps (305) separated by risers which have virtually identical heights (2-3 Angstrom ), where the steps have virtually identical treads with a height of 35-40 Angstrom . Each step extends approximately parallel to a support on which the substrate rests. The method further comprises preheating the substrate under a controlled gas silicon flow before the heating step until sublimation of the first row of atoms of silicon carbide film. The silicon carbide film has a hexagonal crystalline structure. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a method for forming a graphene layer. Substrate (300) Silicon carbide layer (301) Free surface (302) Graphene layer (303) Steps. (305)