• 专利标题:   Vanadium pentoxide heat-sensitive film with sandwich structure used for silicon-based semiconductor, comprises substrate layer, buffer layer, and heat-sensitive layer including vanadium pentoxide layers and carrier concentration increasing layer located between adjacent vanadium pentoxide layers.
  • 专利号:   CN113174596-A, CN113174596-B
  • 发明人:   HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S
  • 专利权人:   WUHAN GAOXIN TECHNOLOGY CO LTD
  • 国际专利分类:   C23C014/08, C23C014/34, C23C016/26, C23C016/34, C23C028/04, G01J005/20
  • 专利详细信息:   CN113174596-A 27 Jul 2021 C23C-028/04 202173 Pages: 8 Chinese
  • 申请详细信息:   CN113174596-A CN10273580 15 Mar 2021
  • 优先权号:   CN10273580

▎ 摘  要

NOVELTY - A vanadium pentoxide heat-sensitive film with sandwich structure comprises a substrate layer, a buffer layer and a heat-sensitive layer arranged from bottom to top. The heat-sensitive layer includes at least two vanadium pentoxide layers and a carrier concentration increasing layer located between every two adjacent vanadium pentoxide layers. USE - The vanadium pentoxide heat-sensitive film with sandwich structure is useful for silicon-based semiconductor. ADVANTAGE - The vanadium pentoxide heat-sensitive film with sandwich structure has increased response rate and carrier concentration through carrier concentration increasing layer, reduced resistance value at room temperature, and high thermal sensitivity, effectively solves the problem of extremely high resistance at room temperature, and is prepared by a method, which is controllable. The multilayer film structure can be realized by chemical vapor deposition and physical vapor deposition methods, and is compatible with silicon-based semiconductor process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the vanadium pentoxide heat-sensitive film with sandwich structure.