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  • 专利标题:   Memory cell switch for reversibly opening and closing circuit, has ferroelectric material formed between graphene structure and conductive structure, where conductive structure provides switch into on and off states.
  • 专利号:   US2013214242-A1, WO2013126171-A1, TW201344895-A, WO2013126171-A9, KR2014132723-A, EP2817825-A1, CN104126227-A, JP2015507376-W, SG11201404679-A1, JP5845364-B2, TW512965-B1, US9368581-B2, CN104126227-B, KR1679490-B1, SG10201703651-A1, SG11201404679-B, EP2817825-A4, SG10201703651-B
  • 发明人:   SANDHU G S, SANDHU G
  • 专利权人:   MICRON TECHNOLOGY INC, MICRON TECHNOLOGY INC, MICRON TECHNOLOGY INC, MICRON TECHNOLOGY INC
  • 国际专利分类:   B82Y099/00, H01L029/06, H01L027/115, H01L029/82, H01L027/24, C01B031/04, H01L027/10, H01L027/28, H01L049/00, H01L051/05, H01L051/30, H01L021/336, H01L021/8246, H01L027/105, H01L029/78, B82Y010/00, G11C011/22, H01L029/16, H01L029/51, H01L029/778
  • 专利详细信息:   US2013214242-A1 22 Aug 2013 H01L-029/06 201359 Pages: 14 English
  • 申请详细信息:   US2013214242-A1 US400518 20 Feb 2012
  • 优先权号:   US400518, KR724898

▎ 摘　　要

NOVELTY - The switch (12) has a graphene structure (24) extending longitudinally between electrodes (16, 18) and being connected to the electrodes. Electrically conductive structures (26, 28) are provided laterally outward of the graphene structure and on opposing sides of the graphene structure. Ferroelectric material (31) is formed between the graphene structure and one of the conductive structures, where the conductive structures provide the switch into on and off states by application of electric field across the graphene structure and the material. USE - Memory cell switch for reversibly opening and closing a circuit. ADVANTAGE - The switch reduces leakage of current through cross-point memory cells, thus avoiding errors during retrieval of stored data from a memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional side view of an integrated circuit construction. Switch (12) Electrodes (16, 18) Graphene structure (24) Electrically conductive structures (26, 28) Ferroelectric material (31)