▎ 摘　　要

NOVELTY - Preparing graphene film comprises e.g. (i) using a higher melting point metal as a support substrate, (ii) placing low melting point metal or alloy having a lower melting point than a high melting point metal on a supporting substrate as a reaction substrate, in a CVD reaction furnace, setting an inert gas flow rate to 200-600 sccm, and heating to obtain a reaction substrate with silica adhered as a growth substrate, (iii) using CVD method to grow super-ordered silicon dioxide graphene composite material, (iii.a) in hydrogen and inert atmosphere, setting the flow rate of hydrogen to 20-50 sccm, the flow rate of the inert gas is 150-600 sccm, and heating, so that the silica and the lower melting metal are mixed uniformly, (iii.b) introducing carbon source, and turning off the carbon source and (iv) transferring the super-ordered silicon dioxide graphene composite material, and transferring only the graphene material down. USE - The film is useful in the field of membrane separation technology. ADVANTAGE - The film has pores uniform size and highly uniform dispersion. DETAILED DESCRIPTION - Preparing graphene film comprises (i) using a higher melting point metal as a support substrate, (ii) placing low melting point metal or alloy having a lower melting point than a high melting point metal on a supporting substrate as a reaction substrate, in a CVD reaction furnace, setting an inert gas flow rate to 200-600 sccm, the hydrogen flow rate to 0-20 sccm, and heating at a temperature higher than the melting point of the reaction substrate and lower than the melting point of the supporting substrate to obtain a reaction substrate with silica adhered as a growth substrate, (iii) using CVD method to grow super-ordered silicon dioxide graphene composite material: (iii.a) in hydrogen and inert atmosphere, setting the flow rate of hydrogen to 20-50 sccm, the flow rate of the inert gas is 150-600 sccm, heating the growth substrate from room temperature to the growth temperature, and maintaining the growth temperature for a certain period of time, so that the silica and the lower melting metal are mixed uniformly, (iii.b) introducing carbon source, the volume ratio of the carbon source gas to the hydrogen is 1:300-1:2, growing for a period of time, turning off the carbon source to form super-ordered circular silica on the graphene film, and (iv) transferring the super-ordered silicon dioxide graphene composite material, and transferring only the graphene material down. An INDEPENDENT CLAIM is also included for graphene film prepared by the above method.