▎ 摘　　要

NOVELTY - Memtransistor comprises a polycrystalline monolayer film of an atomically thin material, where the polycrystalline monolayer film is grown directly on a first sapphire substrate (growth on quartz, graphene, or hexagonal boron nitride substrates may also work) and transferred onto a second substrate, a gate electrode defined on the second substrate, and source and drain electrodes spatially-apart formed on the polycrystalline monolayer film to define a channel region in the polycrystalline monolayer film between. The gate electrode is capacitively coupled with the channel region. USE - Memtransistor used in circuit, electronic device, and system for continuous learning in spiking neural network (all claimed). ADVANTAGE - The memtransistor can minimize crosstalk and sneak currents in scalable crossbar architectures, simplify integration challenges that have hindered memristive architectures based on bulk materials, promise building block for next-generation bio-realistic neuromorphic systems by co-locating memory and transistor functionality, and achieved gate-tunable memristive switching, and provides unique hardware accelerator opportunities for energy efficient artificial intelligence and machine learning. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: 1. a circuit, which comprises: one or more memtransistors; 2. an electronic device, which comprises: one or more memtransistors; 3. a system for continuous learning in a spiking neural network, which comprises: one or more synaptic units, where each synaptic unit comprises one or more memtransistors; and 4. a method for fabricating a memtransistor, which involves: (a) growing a polycrystalline monolayer film of an atomically thin material on a first sapphire substrate; (b) transferring the polycrystalline monolayer film to a second substrate; and (c) forming a gate electrode on the second substrate and source and drain electrodes on the grown polycrystalline monolayer film, where the source and drain electrodes define a channel region in the polycrystalline monolayer film between, and the gate electrode is capacitively coupled with the channel region.