• 专利标题:   Fabrication method for forming sensor e.g. graphene biosensor involves forming sensor having first dielectric layer disposed on substrate, graphene layer disposed on first dielectric layer and gate region disposed on sacrificial layer.
  • 专利号:   US2012329193-A1, US9068936-B2
  • 发明人:   GUO D, HAN S, LIN C, SU N
  • 专利权人:   INT BUSINESS MACHINES CORP
  • 国际专利分类:   H01L021/336, G01N027/414, H01L029/423, H01L029/49, H01L029/66, H01L029/786
  • 专利详细信息:   US2012329193-A1 27 Dec 2012 H01L-021/336 201305 Pages: 9 English
  • 申请详细信息:   US2012329193-A1 US605107 06 Sep 2012
  • 优先权号:   US727434, US605107

▎ 摘  要

NOVELTY - The fabrication method involves forming a channel in substrate (100), and forming a sacrificial layer (202) in the channel. A sensor with first dielectric layer (302) on substrate, graphene layer (304) on first dielectric layer, and second dielectric layer (306) on graphene layer, a source region (402), a drain region (404), and a gate region is formed. The gate region is disposed on sacrificial layer. The sacrificial layer is removed from the channel. The graphene layer includes a graphene tube. The sacrificial layer includes silicon germanium. The substrate is buried oxide substrate. USE - Fabrication method for forming sensor e.g. graphene biosensor used in life sciences, clinical diagnostics, and medical research for affinity based sensing such as hybridization between complementary single strand DNA in microarray or affinity binding of matched antibody-antigen pair. ADVANTAGE - Improves sensitivity of the device due to relatively thin first dielectric layer between the fluid in flow path and graphene layer. Allows first dielectric layer to be formed to desired thickness by forming the first dielectric layer on the substrate. Maintains desired sensitivity of the device by forming the fluid flow path so that fluid contacts the thinner first dielectric layer rather than the thicker second dielectric layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the method for forming a graphene sensor. Substrate (100) Sacrificial layer (202) First dielectric layer (302) Graphene layer (304) Second dielectric layer (306) Source region (402) Drain region (404)