▎ 摘　　要

NOVELTY - The method involves performing saturated carbon dissolution on a single crystal ferromagnetic film, so that the amount of dissolved carbon in the single crystal ferromagnetic film is equal to the saturated amount of dissolved carbon at the growth temperature. The growth temperature is such that there is no graphene phase on the surface of a ferromagnetic film substrate temperature to obtain a single-crystal ferromagnetic film saturated with dissolved carbon. A saturated carbon-dissolved single-crystal ferromagnetic film is cooled from the growth temperature to the target temperature, so that the required number of layers of graphene is segregated and grown. The graphene layers are cooled to room temperature to obtain graphene with a controllable layer thickness on the single crystal ferromagnetic thin film substrate, after the segregation growth is completed. The flow ratio of hydrogen gas to argon gas is 10sccm:50sccm. USE - Method for growing layer thickness controllable graphene on single crystal ferromagnetic film substrate used in spintronic device. ADVANTAGE - The method enables to grow layer thickness controllable graphene on single crystal ferromagnetic film substrate, which is suitable for preparing continuous graphene film, which has high growth quality. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a single crystal iron magnetic thin film substrate. (Drawing includes non-English language text)