• 专利标题:   Graphene/silicon Schottky junction, has silicon dioxide layer whose middle part is provided with vent, and graphene membrane formed on surface of stage hole, where end of graphene membrane is provided with conductive wire.
  • 专利号:   CN101771092-A, CN101771092-B
  • 发明人:   JIA Y, LI C, LI X, LI Z, WANG K, WEI J, WU D, ZHU H
  • 专利权人:   UNIV TSINGHUA
  • 国际专利分类:   H01L031/0224, H01L031/042, H01L031/18
  • 专利详细信息:   CN101771092-A 07 Jul 2010 H01L-031/042 201055 Pages: 7 Chinese
  • 申请详细信息:   CN101771092-A CN10219530 16 Dec 2009
  • 优先权号:   CN10219530

▎ 摘  要

NOVELTY - The junction has a silicon dioxide layer (2) whose middle part is provided with a vent, and an annular golden membrane (1) placed on the silicon dioxide layer. An inner hole of the golden membrane, the vent of the silicon dioxide layer and a surface of an N-type mono-crystal silicon chip (3) form in a stage hole. An end of the titanium-palladium-silver back electrode (4) is provided with a conductive wire. A graphene membrane (5) is formed on a surface of the stage hole. An end of the graphene membrane is provided with another conductive wire. USE - Graphene/silicon Schottky junction. ADVANTAGE - The junction provides a photovoltaic cell which lowers the utilization of silicon. The junction is easy to assemble, inexpensive and is suitable for large-scale production. DESCRIPTION OF DRAWING(S) - The drawing shows top and front views of a graphene/silicon Schottky junction. Annular golden membrane (1) Silicon dioxide layer (2) N-type mono-crystal silicon chip (3) Titanium-palladium-silver back electrode (4) Graphene membrane (5)