▎ 摘　　要

NOVELTY - The LED has a substrate (10). N-type semiconductor layer (21) is located on the substrate. An active layer (22) is located on the N-type semiconductor layer. P-type semiconductor layer (23) is located on the active layer. N-electrode (60) is electrically connected to the N-type semiconductor layer. P-electrode (50) is electrically connected to the P-type semiconductor layer. A composite electron blocking layer (70) is formed by alternately stacking aluminum-indium-gallium-nitride layers that is a p-type doped layer and graphene layers, and is located between the active layer and the P-type semiconductor layer. USE - LED with composite electron blocking layer. ADVANTAGE - The stacking of multilayer material films increases the horizontal expansion ability of holes. The graphene layer is added to the composite electron blocking layer, and the graphene layer improves the lateral expansion ability of holes. The work function of the aluminum-indium-gallium-nitride layer and the graphene layer is matched that improves the growth quality of the electron blocking layer interface, and improves the electron overflow and reduces the starting voltage of the LED. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing LED with composite electron blocking layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional structural view of the LED. Substrate (10) N-type semiconductor layer (21) Active layer (22) P-type semiconductor layer (23) P-electrode (50) N-electrode (60) Composite electron blocking layer (70)