▎ 摘　　要

NOVELTY - Silicon nanostructures are fabricated by depositing etch uniformity improving layer (202) on substrate (201), depositing catalyst (204) on substrate or etch uniformity improving layer, where catalyst layer is in contact with a portion of the substrate or the etch uniformity improving layer, and exposing the catalyst and the substrate or the etch uniformity improving layer to an etchant, where the catalyst causes etching of the substrate, creating etched nanostructures. USE - The method is useful for fabricating silicon nanostructures for use in device for separation and detection of biological species (claimed). Uses include but are not limited to sensors, batteries, thermo-electrics, particle separation arrays, and metamaterials. ADVANTAGE - The method enables fabricating nanostructures in a silicon layer on a non-silicon layer that possess optical lensing properties, thus improving large area etch uniformity of the silicon nanostructure. The method allows the etching of the substrate and the etchant to be performed in a single step, thus reducing the time and cost required to fabricate the silicon nanostructures, and thus improving the throughput of the fabrication of the semiconductor device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) fabricating nanostructures of varying heights; (2) fabricating nanostructures in a material; (3) fabricating nanostructures in a silicon layer on a non-silicon layer; (4) nanostructures in a silicon layer on a non-silicon layer that possess optical lensing properties; (5) device using silicon nanostructures; and (6) device for separation and detection of biological species. DESCRIPTION OF DRAWING(S) - The drawings show cross-sectional diagrams for patterning of catalysts after imprint. Substrate (201) Etch uniformity improving layer (202) Imprint resist (203) Catalyst (204)