▎ 摘　　要

NOVELTY - The method involves growing an epitaxy indium arsenic (InAs) nano-wire on a gallium arsenic (GaAs) substrate by adopting beam epitaxy technology. Characteristic length and diameter of the nano-wire are determined by utilizing a scanning electron microscope. A silicon dioxide P-type single layer is arranged on the substrate. The epitaxy nano-wire is transferred into single layer graphite rare earth nitrate. Chromium and gold are deposited on the nano-line to form a source leakage electrode. A graphene leakage terminal of the substrate is formed as a gate electrode. USE - Graphene and nano-wire heterojunction detector switch ratio improving method. ADVANTAGE - The method enables improving detecting quality and optimizing effect. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an graphene and nano-wire heterojunction detector.'(Drawing includes non-English language text)'