• 专利标题:   Preparation of single-walled carbon nanotube by using substrate adhered or suspended with double-layer graphene material, placing double-layer graphene material in vacuum chamber, vacuum pumping, and conducting electron beam lithography.
  • 专利号:   CN104445139-A, CN104445139-B
  • 发明人:   WAN N, YU K
  • 专利权人:   UNIV SOUTHEAST
  • 国际专利分类:   B82Y030/00, C01B031/02
  • 专利详细信息:   CN104445139-A 25 Mar 2015 C01B-031/02 201535 Pages: 7 Chinese
  • 申请详细信息:   CN104445139-A CN10614829 04 Nov 2014
  • 优先权号:   CN10614829

▎ 摘  要

NOVELTY - Preparation of single-walled carbon nanotube comprises using a substrate adhered or suspended with double-layer graphene material, placing the double-layer graphene material in vacuum chamber, vacuum pumping at 2x 10-3 Pa, starting an electronic gun for electron beam convergence at double-layer graphene material surface, conducting electron beam lithography, controlling the direction of electron beam lithography, where irradiation is conducted for 10-60 minutes, and obtaining the product. USE - Preparation of single-walled carbon nanotube.