▎ 摘　　要

NOVELTY - Graphene structure copper indium sulfide nanosheet array thin film is prepared by mixing copper source and indium source, adding sulfur source, dissolving in mixed water/ethylene glycol solvent, placing conductive substrate in PTFE-lined reaction kettle, carrying out solvothermal reaction in muffle furnace at 100-240 degrees C for 2-120 hours, and growing film to thickness of 2-8 nm. Copper source is monovalent copper salt. Indium source is indium chloride. Sulfur source is sulfur powder and thiourea. USE - Method for preparing graphene structure copper indium sulfide nanosheet array thin film for solar energy battery and photocatalysis. ADVANTAGE - The thin film has simple preparation, low cost, and uniform array.