▎ 摘　　要

NOVELTY - A graphene detector comprises silicon substrate (1), which is provided with silicon dioxide/silicon nitride distributed Bragg reflector (DBR) layer (4) sequentially arranged with silicon dioxide layer (2) and thicker silicon nitride layer (5), which is provided with graphene layer (6), the layer (6) is provided with colloid quantum dot layer (8), and the graphene layer (6) on the periphery of the colloid quantum dot layer (8) is provided with metal electrode (7). USE - Graphene detector used for photoelectric device. ADVANTAGE - The detector solves the problem that the graphene has low light absorption coefficient due to zero band gap structure of graphene in the existing method, so that the responsivity of the photoelectric device is low. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of graphene detector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a graphene detector. 1Silicon substrate 2Silicon dioxide layer 3Silicon nitride layer 4Silicon dioxide/silicon nitride distributed Bragg reflector layer 5Thicker silicon nitride layer