• 专利标题:   Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.
  • 专利号:   US2014199829-A1, JP2014136657-A, KR2014092262-A, US9219008-B2, JP6074270-B2
  • 发明人:   MATSUMOTO T, KASHIWAGI Y
  • 专利权人:   TOKYO ELECTRON LTD, TOKYO ELECTRON LTD, TOKYO ELECTRON LTD
  • 国际专利分类:   H01L021/285, C01B031/02, H01L021/027, H01L021/205, H01L021/28, H01L021/768, H01L023/532, B01J019/08, B01J023/755, C01B032/15, C01B032/18, C01B032/182
  • 专利详细信息:   US2014199829-A1 17 Jul 2014 H01L-021/285 201450 Pages: 14 English
  • 申请详细信息:   US2014199829-A1 US153788 13 Jan 2014
  • 优先权号:   JP004490

▎ 摘  要

NOVELTY - A graphene patterning method for forming a graphene of a predetermined pattern, involves: bringing a patterning member in which a catalyst metal layer of the predetermined pattern is formed into contact with a substrate (S) having a graphene oxide film (50), where, in bringing the patterning member, the catalyst metal layer is brought into contact with the graphene oxide film. USE - For forming a graphene of a predetermined pattern (claimed). ADVANTAGE - The process is time consuming and decreases manufacturing efficiency; and remove the catalyst metal layers in a post process, and increase the production efficiency of semiconductor devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a patterning member configured to make contact with a substrate having a graphene oxide film, comprising: a catalyst metal layer of a predetermined pattern formed on a surface of the patterning member making contact with the graphene oxide film. DESCRIPTION OF DRAWING(S) - The figure shows diagram for explaining the structure of the graphene pattern formed on the substrate. Graphene oxide film (50) Wirings (51) Substrate (S)