▎ 摘　　要

NOVELTY - This utility new type belongs to new material technology field, claims a one using a high temperature annealing preparation graphene up silicon carbide substrate of device, wherein the device comprise quartz heating cavity and a set of graphite bucket use the heating cavity inner, use a time bucket is placed in the graphite inner cavity, of using conventional radio frequency heating method for the heating a graphene, wherein the quartz comprise inner heating chamber is provided with a hollow interlayer of upper opening cavity and a top cover, inner cavity insulating layer., heat preservation layer is heat preservation layer middle part groove, using a graphite bucket comprise of upper end opening of bucket body, bucket body bottom upper surface with a groove, the upper graphite. bucket upper part side wall up. with a location block, the location block is provided with hot reflecting screen, using device of such a structure, the heating uniformity and efficiency is high, the heat loss is little, the using through high temperature annealing preparation graphene up silicon carbide substrate, improves the purity of graphite, saves the production cost and improves the production efficiency.