▎ 摘　　要

NOVELTY - The device has a substrate provided with a pattern layer. A graphene layer is formed on the pattern layer along predetermined direction. The graphene layer is provided with a graphene sheet. A passivation layer is formed on the graphene layer. An electrode layer is provided with the graphene layer. An isolation film layer is arranged between the substrate and the graphene layer. USE - Semiconductor device. ADVANTAGE - The device has better productivity, on/off current ratio, and semiconductor property of the graphene layer. The device can facilitate base-gap control of the grapheme layer, can facilitate switching speed, and is convenient to manufacture. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor device.