• 专利标题:   Forming a graphene layer used in e.g. electric devices, or transparent electrodes involves forming metal thin film on substrate; injecting carbon ions into the thin film; and heat-treating the carbon ions injected into the thin film.
  • 专利号:   US2011189406-A1, KR2011089501-A, KR1132706-B1
  • 发明人:   CHO B J, MUN J H
  • 专利权人:   KOREA ADV INST SCI TECHNOLOGY, KOREA ADV INST SCI TECHNOLOGY
  • 国际专利分类:   C23C014/48, C23C014/06, C23C014/22, C23C014/58
  • 专利详细信息:   US2011189406-A1 04 Aug 2011 C23C-014/48 201153 Pages: 8 English
  • 申请详细信息:   US2011189406-A1 US705187 12 Feb 2010
  • 优先权号:   KR008936

▎ 摘  要

NOVELTY - Forming a graphene layer, involves: (a) forming a metal thin film on a substrate; (b) injecting carbon ions into the metal thin film; and (c) heat-treating the carbon ions injected into the metal thin film to form a graphene layer on the metal thin film. USE - For forming a graphene layer (claimed) used in electric devices, transparent electrodes, semiconductor memory devices, or microwave circuits. ADVANTAGE - The graphene layer is formed by uniformly injecting an accurate amount of carbon ions into a metal thin film depending on the maximum solubility of carbon in the metal thin film and then heat-treating the injected carbon ions, thus uniformly forming the graphene layer on the metal thin film. Since hydrocarbon gas is not additionally used in a process of forming the graphene layer, a reactor is not contaminated, so that the internal environment of the reactor can be maintained constant, thus ensuring reproducible formation of the graphene layer.