• 专利标题:   Graphene temperature sensor for use in aerospace field, has structure made of top gate electrode, alloy film, upper silicon dioxide layer, silsesquioxane, graphene layer, electrode, lower silicon dioxide layer, substrate and gate electrode.
  • 专利号:   CN103630254-A, CN103630254-B
  • 发明人:   ZHANG P, MA Z, WU Y, ZHUANG Y, FENG Y, ZHAO Y, CHEN Y
  • 专利权人:   UNIV XIDIAN
  • 国际专利分类:   G01K007/00
  • 专利详细信息:   CN103630254-A 12 Mar 2014 G01K-007/00 201429 Chinese
  • 申请详细信息:   CN103630254-A CN10586376 18 Nov 2013
  • 优先权号:   CN10586376

▎ 摘  要

NOVELTY - The sensor has a structure made of a top gate electrode, a nickel-chromium alloy film, an upper silicon dioxide layer, a hydrogen silsesquioxane, a double graphene layer, a source-drain electrode, a lower silicon dioxide layer, silicon substrate, and a back gate electrode arranged from up to down. The double-layer graphene is deposited with 300nm thickness using a machinery stripping process. An electron beam photo-etching technique is used on a source end and a drain end for manufacturing an electrode. USE - Graphene temperature sensor for use in an aerospace field. ADVANTAGE - The sensor has high sensitivity, low intrinsic noise, high detecting speed and better application prospect in the aerospace field. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene temperature sensor preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene temperature sensor. '(Drawing includes non-English language text)'