• 专利标题:   Method for preparing zinc selenium film/graphene heterojunction-based image sensor, involves growing graphene on copper foil, dissolving substrate in anisole PMMA solution, followed by performing oxygen plama etching on electrode.
  • 专利号:   CN107221577-A
  • 发明人:   WANG M, WU C, MA Y, XU Z, YANG J, GU L
  • 专利权人:   UNIV HEFEI TECHNOLOGY
  • 国际专利分类:   H01L031/109, H01L031/18
  • 专利详细信息:   CN107221577-A 29 Sep 2017 H01L-031/18 201781 Pages: 5 Chinese
  • 申请详细信息:   CN107221577-A CN10388253 27 May 2017
  • 优先权号:   CN10388253

▎ 摘  要

NOVELTY - A zinc selenium film/graphene heterojunction-based large-area flexible image sensor preparing method involves growing graphene on a copper foil and dissolving the coated substrate in anisole PMMA solution. The coated substrate is heated and etched. The etched substrate is dried and soaked in acetone and PET. Zinc selenium micron array is deposited on the graphene/PET substrate to obtain zinc-selenium/graphene substrate. Chromium and gold is deposited on the substrate. Oxygen plasma etching technique is performed on the electrode to obtain a finished product. USE - Method for preparing zinc selenium film/graphene heterojunction-based large-area flexible image sensor. ADVANTAGE - The method enables preparing the sensor better performance, in a simple and cost effective manner. DETAILED DESCRIPTION - A zinc selenium film/graphene heterojunction-based large-area flexible image sensor preparing method involves growing graphene on a copper foil by performing chemical vapor deposition technique and dissolving the coated graphene/copper foil substrate in anisole PMMA solution. The coated substrate is heated in a heating table at 165-175 degrees C for 4-6 minutes. Back surface of graphene coated copper foil is etched by placing in iron chloride solution and then dilute hydrochloric acid and de-ionized water. The etched substrate is dried and soaked in acetone and PET for 4-6 minutes to obtain graphene/PET substrate. Zinc selenium micron array is deposited on the graphene/PET substrate by performing beam evaporation to obtain zinc-selenium/graphene substrate. Chromium and gold is deposited on the substrate as source electrode and drain electrode. Oxygen plasma etching technique is performed on the deposited electrode to obtain a finished product.