• 专利标题:   Solid carbon source chemical vapor deposition synthesis of graphene by depositing amorphous solid carbon source on cobalt film metal substrate, heating reaction cell, adding solid carbon source/catalyst, reacting, cracking and cooling.
  • 专利号:   CN104609406-A, CN104609406-B
  • 发明人:   DONG L, HU B, JIN Y, YANG Q, FANG Q
  • 专利权人:   UNIV CHONGQING, ZHEJIANG SHENGYUAN CHEM FIBER CO LTD, UNIV CHONGQING, ZHEJIANG SHENGYUAN CHEM FIBER CO LTD
  • 国际专利分类:   C01B031/04, C01B032/184
  • 专利详细信息:   CN104609406-A 13 May 2015 C01B-031/04 201558 Pages: 8 Chinese
  • 申请详细信息:   CN104609406-A CN10025386 19 Jan 2015
  • 优先权号:   CN10025386

▎ 摘  要

NOVELTY - Solid carbon source chemical vapor deposition synthesis of graphene comprises taking cobalt film metal substrate, depositing amorphous solid carbon source, preparing solid carbon source/catalyst double-layer structure, regulating hydrogen reactive gas and argon diluting gas for first reaction stage, heating reaction cell to target temperature, adding double-layer structure into reaction cell, reacting amorphous carbon and reactive gas to obtain carbon-containing gas, regulating carrier gas for second reaction stage, cracking, generating graphene surface and rapidly cooling to room temperature. USE - Method for solid carbon source chemical vapor deposition synthesis of graphene (claimed). ADVANTAGE - The method has precise control of supplied amount of solid carbon source, and low temperature and pressure.