▎ 摘 要
NOVELTY - Low-temperature curing conductive adhesive comprises 0.1-88 wt.% liquid metal conductive particles; 4-90 wt.% thermosetting resin; 0-8 wt.% organic acid activator; 0.3-5 wt.% corrosion inhibitor; 0.3 to 5 wt.% thixotropic agent; 0 to 10 wt.% solvent; 0.2 to 10 wt.% curing agent; 0.1 to 0.3 wt.% defoaming agent; 0 to 2 wt.% micro-nano reinforcing particles. USE - Low-temperature curing conductive adhesive for solder joint or seam (claimed). ADVANTAGE - The low-temperature curing conductive adhesive has small conductive particle size, the curing temperature of the conductive adhesive is low, the curing time is short, the steel mesh dot glue printing life is long, the solder joint shear strength is high, the thermal conductivity is high, and it has good use performance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a method for preparing low-temperature curing conductive adhesive, which involves putting solvent, thermosetting resin, organic acid activator, corrosion inhibitor, and thixotropic agent into a reactor at 80-130 degrees C and stirring for 60-150 minutes until all solid particles are dissolved and appear clear and transparent; (2) adding liquid metal and micro-nano reinforcing particles, mechanical high-speed dispersion or ultrasonic dispersion, the liquid metal is dispersed into liquid metal conductive particles; (3) transferring the materials in the reaction kettle to a cooling vessel, sealing, and cooling naturally to room temperature; (4) adding curing agent and defoamer to the material, and dispersing mechanically at high speed or/and ultrasonically until the diameter of the droplet is less than 15 mu m; and (5) a solder joint or seam formed based on the low-temperature curing conductive adhesive, where solder joint or the weld seam is in a liquid state, a solid state, or a solid-liquid mixed state at the temperature of the normal use state, temperature has not reached the TG point of the curing adhesive, and the conductive adhesive still has the connection strength required for microelectronics and semiconductor packaging.