▎ 摘　　要

NOVELTY - The Schottky junction detector has a lower metal electrode, a lightly doped n-type silicon, an insulating dielectric layer (103), a phase-change material film (104), a graphene film (105), and an upper metal electrode (106). The photoresist (102) is used as mask after cleaning the epitaxial wafer, while growing the insulating dielectric layer of 200nm and stripping the leakage substrate window. The phase change material is sputtered at the window through the photoetching stripping technology. The growth graphene film is deposited by chemical vapor deposition. The electrode pattern is photoetched while using sputtering or evaporation to make upper metal electrode and lower metal electrode on the graphene surface and back surface of the substrate. The electrode material is titanium/aluminum. USE - Schottky junction detector for catalytic growth of graphene using phase change material in semiconductor optoelectronic device e.g. solar battery. ADVANTAGE - The method for catalytically growing graphene by phase change material avoids the stain and damage caused by graphene lithography and corrosion. Due to the insulation of the phase-change material at low temperature, the detector cannot need to remove the catalytic sacrificial layer and the patterning fineness is high, and the device preparation efficiency is high. The preparation efficiency of the graphene is improved while enhancing the industrialization potential of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the Schottky junction detector illustrating the flow graphene of the patterned growth. (Drawing includes non-English language text) 101Substrate 102Photoresist 103Insulating dielectric layer 104Phase-change material film 105Graphene film 106Upper metal electrode