▎ 摘　　要

NOVELTY - The method involves providing a substrate (100). A shallow trench isolation structure is formed in the substrate and an active area. Metal-graphene (200) is formed on a surface of the substrate. A gate is formed at the metal-graphene. A metal-graphene layer is formed under the gate. A gate stack is formed, where the gate stack comprises a gate medium layer (210) and a gate electrode (250). An interlayer medium layer is formed on a contact hole (600) of the metal-graphene. An electric conduction material is filled in the contact hole. USE - Semiconductor structure manufacturing method. ADVANTAGE - The method enables reducing source/drain area contact resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor structure. Substrate (100) Metal-graphene (200) Gate medium layer (210) Gate electrode (250) Contact hole (600)