▎ 摘　　要

NOVELTY - The method involves providing (S01) a bottom electrode substrate, and preparing a first functional layer on the bottom electrode substrate. A quantum dot material is formed (S02) with organic ligands bound on the surface on the first functional layer to prepare a quantum dot light-emitting layer, and the number of carbon atoms of the organic ligand is 4-12. A second functional layer is prepared (S03) on the quantum dot light-emitting layer, a top electrode is prepared on the second functional layer, and a quantum dot LED is prepared. Heat treatment of the device is performed. The bottom electrode substrate is an anode substrate, the first functional layer is a hole functional layer, the second functional layer is an electron functional layer, and the top electrode is a cathode, or the bottom electrode substrate is a cathode substrate, the first functional layer is an electron functional layer, the second functional layer is a hole functional layer, and the top electrode is an anode. USE - Method for preparing quantum dot LED. ADVANTAGE - The method provides quantum dot light emitting diode with high brightness, low power consumption, wide color gamut, easy processing, high quality of thin film for injection and transmission of electron and hole, reduced non-radiation composite probability, and improved efficiency and stability. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing quantum dot LED. (Drawing includes non-English language text) Step for providing a bottom electrode substrate, and preparing a first functional layer on the bottom electrode substrate (S01) Step for forming quantum dot material with organic ligands bound on the surface on the first functional layer to prepare a quantum dot light-emitting layer (S02) Step for preparing second functional layer on the quantum dot light-emitting layer, preparing a top electrode on the second functional layer, and preparing a quantum dot LED (S03)