▎ 摘　　要

NOVELTY - The photodetector has a oxide substrate layer (2), an oxide cladding layer (3), and graphene. A first metal electrode (4) and a second metal electrode (5) are symmetrically placed. Both electrodes are made of sub-wavelength metal structures and together form a sub-wavelength metal electrode. The sub-wavelength metal electrode is arranged across the silicon waveguide (1) by two different metals. USE - Silicon-based graphene photodetector. ADVANTAGE - The sub-wavelength metal electrode performs light field control on the transverse magnetic (TM) mode transmitted in the silicon waveguide, while increasing the electric field component parallel to the direction of the graphene and enhancing the interaction between the light field and the graphene and improving the responsiveness of the detector. The contact area is increased between the electrode and graphene, while increasing the absorption efficiency of carriers. The resonance effects are avoided, while achieving a broadband response. The photodetector makes the entire detector smaller in size, by controlling the length and width of the detector to the micron level, while ensuring a large bandwidth. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a silicon-based graphene photodetector. Silicon waveguide (1) Oxide substrate layer (2) Oxide cladding layer (3) First metal electrode (4) Second metal electrode (5)