▎ 摘　　要

NOVELTY - Producing epitaxial structure comprises providing a multilayer graphene layer having multiple through-holes, providing single crystal substrate having graphene layer formed, so that the graphene layer is in contact with the multilayer graphene layer, attaching the multilayer graphene layer and the single crystal substrate, and growing a semiconductor structure to be selectively located inside the through-holes. USE - The epitaxial structure is useful in flexible electronic device. ADVANTAGE - The epitaxial structure: has long-term stability under high-temperature, and high-humidity environments and has uniform crystal characteristic. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for epitaxial structure having an epitaxial relationship with the single crystal substrate comprising a single crystal substrate, a multilayer graphene layer positioned on the single crystal substrate and a concave part and a convex part, and a semiconductor structure positioned in the concave part and grown in a vertical direction. The lower part of the concave part is in contact with the semiconductor structure a graphene layer, where the semiconductor structure is the single crystal.