• 专利标题:   Semiconductor device including the graphene varistor for display device in display device industry, has radiation layer formed on terminal structure, and gate terminal, insulator and another terminal structure is made of graphene material.
  • 专利号:   WO2015115708-A1, KR2015090656-A
  • 发明人:   CHOI S Y, HA Y W, PARK H M, PARK I J
  • 专利权人:   KOREA ADVANCED INST SCI TECHNOLOGY
  • 国际专利分类:   H01L029/86, H01L033/00
  • 专利详细信息:   WO2015115708-A1 06 Aug 2015 H01L-029/86 201555 Pages: 13
  • 申请详细信息:   WO2015115708-A1 WOKR006499 17 Jul 2014
  • 优先权号:   KR011554

▎ 摘  要

NOVELTY - The device has a radiation layer formed on a terminal structure. A transparent substrate (10) is adhered between two terminal structures. One of the terminal structures is formed with a light emitting layer i.e. LED or OLED. A gate terminal, an insulator (140) and another terminal structure is made of graphene material (130). The latter terminal structure is provided with an anode terminal (260). The terminal structures are provided with a different work function featured electrode. USE - Semiconductor device graphene varistor for a display device in a display device industry. ADVANTAGE - The device is provided with a graphene varistor and made of the graphene material so as to easily change work function of the a light emitting device, improve property of a graphene electrode and transparency property of the device and accurately confirm whether the graphene electrode is exposed. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of an LED of a semiconductor device. Transparent substrate (10) Graphene material (130) Insulator (140) Gate electrode (150) Anode terminal (260)