▎ 摘　　要

NOVELTY - Photoelectric detector based on two-dimensional semiconductor comprises an insulating layer (2) set on the substrate layer (1), the heterogeneous structure formed on insulating layer and electrode (3) respectively with the heterogeneous structure source electrode and drain electrode, where the heterogeneous structure comprises a tungsten diselenide layer (4), a graphene layer (5) and rhenium disulfide layer, the tungsten diselenide layer, the contact layer and rhenium disulfide layer are formed by Van der Waals contact the stacking of the three heterojunction, the tungsten diselenide layer is located on the bottom layer completely with the insulating layer contact the graphene layer placed in the middle layer, the rhenium disulfide layer is placed on the top layer, the tungsten diselenide layer and rhenium disulfide layer are separated by the graphene layer and not contact. The substrate layer uses strong p-type silicon. USE - The photoelectric detector based on two-dimensional semiconductor photo-electronic functional device is useful in photo-electronic functional device. ADVANTAGE - The photoelectric detector is capable of realizing high sensitivity, wide band and polarization sensitive light wave detection. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the photoelectric detector based on two-dimensional semiconductor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the photoelectric detector based on two-dimensional semiconductor photo-electronic functional device. Substrate layer (1) Insulating layer (2) Drain electrode (3) Tungsten diselenide layer (4) Graphene layer (5)