▎ 摘　　要

NOVELTY - Preparing multilayer graphene involves heating the box-shaped metal substrate to remove the surface oxide layer at high temperature, introducing methane and hydrogen into a growth chamber, and cracking methane at high temperature using copper as a catalyst to generate activated carbon atoms, which are deposited on the inner and outer surfaces of the substrate to start graphene growth. The outer surface of the substrate is etched by a plasma device to remove the graphene grown on the outer surface. The outer surface of the substrate is etched again to achieve continuous growth of multilayer graphene. USE - Method for preparing multilayer graphene. ADVANTAGE - The method achieves controllable growth on the inner surface.