1. 平台首页
  2. 国际专利信息
  • 专利标题:   Chemical vapor deposition of single crystal used for increasing graphene domain size, by heating substrate in chemical vapor deposition device, passing under inert gas into carbon-containing gas, reacting and cooling to room temperature.
  • 专利号:   CN103352249-A
  • 发明人:   CHEN Z, WANG B, YU G, ZHANG H, ZHANG Y
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C30B025/00, C30B029/02
  • 专利详细信息:   CN103352249-A 16 Oct 2013 C30B-029/02 201405 Pages: 7 Chinese
  • 申请详细信息:   CN103352249-A CN10236892 14 Jun 2013
  • 优先权号:   CN10236892

▎ 摘　　要

NOVELTY - Chemical vapor deposition of single crystal comprises placing substrate into chemical vapor deposition device, heating to 500-1600 degrees C, passing under inert gas into carbon-containing gas, reacting at 0.1-760 torr and cooling to room temperature. USE - Method for chemical vapor depositing single crystal (claimed) used for increasing graphene domain size. ADVANTAGE - The method is simple and easy. The graphite domain size is more 10 times, has high repeatability and does not affect other growth parameters of growth of graphene.