▎ 摘 要
NOVELTY - Chemical vapor deposition of single crystal comprises placing substrate into chemical vapor deposition device, heating to 500-1600 degrees C, passing under inert gas into carbon-containing gas, reacting at 0.1-760 torr and cooling to room temperature. USE - Method for chemical vapor depositing single crystal (claimed) used for increasing graphene domain size. ADVANTAGE - The method is simple and easy. The graphite domain size is more 10 times, has high repeatability and does not affect other growth parameters of growth of graphene.