• 专利标题:   Preparing graphene superconducting ceramic circuit substrate comprises e.g. washing substrate with water, then with weak acid salt to decontaminate the activated surface, and polishing cleaned substrate on grinder to a flat surface finish.
  • 专利号:   CN110628280-A
  • 发明人:   HUANG J, KONG T, WANG L, ZHANG Q, SU B, WANG W
  • 专利权人:   UNIV XIAN SHIYOU
  • 国际专利分类:   C09D133/04, C09D007/61, C09D007/65, C23C014/02, C23C014/18, C23C014/24
  • 专利详细信息:   CN110628280-A 31 Dec 2019 C09D-133/04 202008 Pages: 9 Chinese
  • 申请详细信息:   CN110628280-A CN10872308 16 Sep 2019
  • 优先权号:   CN10872308

▎ 摘  要

NOVELTY - Preparing graphene superconducting ceramic circuit substrate comprises e.g. (i) washing substrate with water, and then washing with a weak acid salt to decontaminate the activated surface, (ii) polishing cleaned substrate on a grinder and polishing it to a flat surface finish Ra not less than 0.008 um, after polishing, using step (i) for cleaning and drying, (iii) placing polished substrate in a coating chamber and evacuating, heating polished substrate for ion bombardment, and then pre-melting nickel plating material, after completing pre-melting, performing evaporative deposition, and the thickness of the base film layer is 1-5 um, (iv) adding graphene and silane coupling agent into distilled water, performing first stirring and ultrasonic cleaning to obtain a graphene dispersion, adding potassium silicate and silicone acrylate emulsion with a modulus of 5.5 to graphene dispersion, and the base material is obtaining by a second stirring. USE - The method is useful for preparing graphene superconducting ceramic circuit substrate. ADVANTAGE - The circuit substrate: has strong binding force, flat surface, and simple preparation process. DETAILED DESCRIPTION - Preparing graphene superconducting ceramic circuit substrate comprises (i) washing substrate with water, and then washing with a weak acid salt to decontaminate the activated surface, (ii) polishing cleaned substrate on a grinder and polishing it to a flat surface finish Ra not less than 0.008 um, after polishing, using step (i) for cleaning and drying, (iii) placing polished substrate in a coating chamber and evacuating, heating polished substrate for ion bombardment, and then pre-melting nickel plating material, after completing pre-melting, performing evaporative deposition, and the thickness of the base film layer is 1-5 um, (iv) adding graphene and silane coupling agent into distilled water, performing first stirring and ultrasonic cleaning to obtain a graphene dispersion, adding potassium silicate and silicone acrylate emulsion with a modulus of 5.5 to graphene dispersion, and the base material is obtaining by a second stirring, obtaining graphene coating by stirring the obtained mixed solution for third time, and (v) placing graphene paint into a spray gun, spraying uniformly on the surface of the substrate, and drying it after spraying, and then sintering.