▎ 摘　　要

NOVELTY - The method involves transferring graphene grown on a metal substrate by vapor deposition to the target device to be applied and is not transferred to the target device. The graphene film is patterned and the patterned graphene film is eventually transferred to a target device (4). The metal foil (1) with good graphene is bonded to the base film (3) to form a composite structure of metal foil/graphene/base film. The metal foil is etched off by the etching solution, and graphene is retained on the base film to form a composite film structure of graphene/base film. USE - Method of patterning for forming graphene on target device. ADVANTAGE - The high quality patterned graphene is transferred to complex devices. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the method of patterning for forming graphene on target device. Metal foil (1) Alkene (2) Base film (3) Target device (4) ITO conducting layer (5)