▎ 摘　　要

NOVELTY - Preparing growth graphene of doped germanium single crystal involves using the horizontal gradient condensation method to synthesize germanium polycrystalline, and cutting the polycrystalline germanium, cutting polycrystalline germanium, the crucible, quartz tube, quartz cap for cleaning, then processing dry, putting the seed crystal into the seed crystal cavity of the crucible bottom unit and then the polycrystalline germanium, single-layer single crystal graphene in the crucible, the weight ratio of the single crystal graphene polycrystalline germanium is 0.15-0.3:1000, then putting the crucible into the quartz tube, vacuuming until the absolute vacuum degree is 0.2-0.5 Pa, then sealing the quartz tube, putting the sealed quartz tube into a single crystal, furnace to grow germanium single crystal, controlling the axial temperature gradient is 3-5 °C/cm, the radial temperature gradient is less than 2 °C. USE - Method for preparing growth graphene of doped germanium single crystal (claimed). ADVANTAGE - The germanium single crystal has low dislocation density and excellent mechanical properties.