• 专利标题:   Quantum dot display device has material corresponding to first electrode layer and material corresponding to second electrode layer which are non-metallic doped graphene.
  • 专利号:   CN107104192-A, WO2018188155-A1, US2018366673-A1, CN107104192-B
  • 发明人:   XIE H
  • 专利权人:   SHENZHEN CHINA STAR OPTOELECTRONCS TECHN, SHENZHEN CHINA STAR OPTOELECTRONICS TECH, SHENZHEN CHINA STAR OPTOELECTRONICS TECH
  • 国际专利分类:   H01L051/00, H01L051/50, H01L051/56, H01L051/52
  • 专利详细信息:   CN107104192-A 29 Aug 2017 H01L-051/50 201772 Pages: 20 Chinese
  • 申请详细信息:   CN107104192-A CN10244634 14 Apr 2017
  • 优先权号:   CN10244634

▎ 摘  要

NOVELTY - The device has a device combination layer (103) which comprises an electron transport layer and carbon quantum dot light emitting layer, a hole transport layer and a hole injection layer. The material corresponding to the first electrode layer (102) is fullerene-graphene and carbon nanotubes are made of graphene. The material corresponding to the second electrode layer (104) is fullerene-graphene. The material corresponding to the first electrode layer and the material corresponding to the second electrode layer are non-metallic doped graphene. USE - Quantum dot display device. ADVANTAGE - The quantum dot display device reduces the use of metal material and avoids damaging the environment. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of quantum dot display device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the quantum dot display device. Flexible substrate (101) First electrode layer (102) Device combination layer (103) Second electrode layer (104)