▎ 摘　　要

NOVELTY - Method for preparing epitaxial graphene by laser heating, involves (a) putting the cleaned silicon carbide substrate into the deposition chamber of the laser chemical vapor deposition equipment, passing high-purity argon gas into the chamber, and adjusting the gas pressure in the chamber to 1000-10000 Pa, (b) turning on the laser to irradiate the silicon carbide substrate, increasing the surface temperature of the substrate to 1500-2000 degrees C at a rate of 400-600 degrees C/second, and continuing to irradiate for 1-5 minutes, and (c) adjusting the laser power to reduce the substrate surface temperature to 600 degrees C at a rate of 100-200 degrees C/second, turning off the laser, stopping the argon flow, turning on the vacuum pump and keeping the vacuum of the chamber at 1-10 Pa, and naturally cooling to room temperature. USE - The method is used for preparing epitaxial graphene. ADVANTAGE - The method rapidly prepares epitaxial graphene with large growth area, high conductivity, controllable number of layers and high crystal quality.