• 专利标题:   Pressure sensor for measuring hydraulic pressures, has transistor equipped with graphene layer as channel, and wire containing piezoelectric material and whose one side is connected on gate of transistor.
  • 专利号:   JP2011196740-A, JP5440295-B2
  • 发明人:   YAGISHITA Y
  • 专利权人:   FUJITSU LTD, FUJITSU LTD
  • 国际专利分类:   C01B021/06, C01B031/04, C01G009/02, G01L009/00, H01L029/786, H01L041/08, H01L041/18, H01L041/22, H01L041/24, H01L051/05, H01L051/30
  • 专利详细信息:   JP2011196740-A 06 Oct 2011 G01L-009/00 201167 Pages: 19 Japanese
  • 申请详细信息:   JP2011196740-A JP061918 18 Mar 2010
  • 优先权号:   JP061918

▎ 摘  要

NOVELTY - A pressure sensor (10) has a transistor (TR) equipped with graphene layer (3) as a channel, and a wire (8) containing a piezoelectric material and whose one side is connected on the gate (5) of the transistor. USE - Pressure sensor used for measuring hydraulic pressures and atmospheric pressure. ADVANTAGE - Since the area of wire occupied within pressure sensor compared with piezoelectric thin film is small, the nanowire efficiently detects the pressure of a micro region. The micro variation of induced voltage produced in the nanowire is detectable utilizing the transistor with high selectivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of pressure sensor, which involves forming transistor equipped with graphene layer as channel, on a substrate, and growing wire on the gate of the transistor. DESCRIPTION OF DRAWING(S) - The drawing shows the perspective view of the pressure sensor. Graphene layer (3) Gate (5) Wire (8) Pressure sensor (10) Transistor (TR)