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  • 专利标题:   Preparation of graphene used for transparent electrode for display device, transistor and integrated circuit, involves forming photosensitive layer on substrate, heating photosensitive layer and growing graphene on substrate.
  • 专利号:   WO2013042916-A1, KR2013030564-A, KR1249678-B1, KR1298084-B1, KR1416713-B1, KR2013067653-A
  • 发明人:   LEE S W, HUNG M, PANIN G, KANG T W, WUK L S, LEE S J, UK L S, WON G T, JU L S, HEE C J
  • 专利权人:   UNIV DONGGUK IND ACAD COOP FOUND
  • 国际专利分类:   C01B031/02, G03F007/16, G03F007/26, H01B001/04, G03F007/004, G03C001/74, H01B017/62
  • 专利详细信息:   WO2013042916-A1 28 Mar 2013 C01B-031/02 201325 Pages: 34
  • 申请详细信息:   WO2013042916-A1 WOKR007450 18 Sep 2012
  • 优先权号:   KR094122, KR134440, KR014315

▎ 摘　　要

NOVELTY - Preparation of graphene involves forming photosensitive layer on a substrate (110), heating photosensitive layer and growing graphene on the substrate (120). USE - Preparation of graphene (claimed) used for transparent electrode for display device, transistor and integrated circuit. ADVANTAGE - The method provides graphene having high quality, by a simple process. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart explaining the preparation of graphene. Step for forming photosensitive layer on substrate (110) Step for growing graphene on substrate (120) Start (AA) End (BB)