▎ 摘　　要

NOVELTY - Producing graphene film, comprises e.g. (a) ultrasonically cleaning a metal substrate with hydrochloric acid, acetone, and deionized water for 5-10 minute to remove moisture content on the surface, and subjecting the metal substrate to high temperature annealing at 850-1050 degrees C under argon flow rate of 300-1000 sccm and hydrogen flow rate of 10-100 sccm for 10-90 minutes, (b) uniformly cooling at 200-800 degrees C under argon atmosphere with argon gas flow rate of 300-1000 sccm, and (c) lowering to predetermined reaction temperature. USE - The method is useful for producing graphene film (claimed). ADVANTAGE - The method produces graphene film with high quality and uniform layers, and is simple and economical. DETAILED DESCRIPTION - Producing graphene film, comprises (a) ultrasonically cleaning a metal substrate with hydrochloric acid, acetone, and deionized water for 5-10 minute to remove moisture content on the surface, and subjecting the metal substrate to high temperature annealing at 850-1050 degrees C under argon flow rate of 300-1000 sccm and hydrogen flow rate of 10-100 sccm for 10-90 minutes, (b) uniformly cooling at 200-800 degrees C under argon atmosphere with argon gas flow rate of 300-1000 sccm, and (c) lowering to predetermined reaction temperature, and introducing carbon gas source and argon gas to chemical vapor deposition to obtain a graphene film.