▎ 摘　　要

NOVELTY - Preparing large-area patterned graphene involves using a three-layer glue process, and the three-layer glue process is spin-coating the first polymer support layer on the graphene surface and transferring to the target substrate surface, spin-coating the second sacrificial layer of soluble photoresist and drying to cure, spin-coating the third layer of photoresist, drying, and performing optical exposure to obtain a photoresist pattern with a trapezoidal cross-sectional structure. The polymer support layer and graphene that are not protected are etched by the mask using a reactive ion etching machine. The second layer of soluble photoresist, the third layer of photoresist and the polymer support layer are sequentially removed by the stripping solution to obtain patterned graphene. USE - Method for preparing large-area patterned graphene. ADVANTAGE - The method enables to prepare large-area patterned graphene, which uses a three-layer glue process to replace the traditional photoresist mask etching method, avoids the problem of photoresist denaturation during the graphene etching process and avoids the pollution of graphene caused by repeated glue application.