▎ 摘　　要

NOVELTY - The detector has a semiconductor substrate (4) formed with a heterogeneous insulating layer (5), where the heterogeneous insulating layer is up made of graphene (2). Two ends of a heterojunction are provided with a source (6) and a drain. A gate is formed at a rear surface of the semiconductor substrate. The Graphene is in interface contact with a Bismuth telluride layer (1). The Graphene is in ohmic contact with the source and the drain, where the semiconductor substrate is a Silicon substrate, a Germanium substrate or a Gallium arsenide substrate. Thickness of the heterogeneous insulating layer is measured for about 10nm to 300nm. USE - Bismuth telluride-graphene heterojunction based terahertz wave detector. ADVANTAGE - The detector improves light absorption rate and performance of the detector and effectively ensures integrity of graphene-bismuth telluride and the heterojunction. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a bismuth telluride-graphene heterojunction based terahertz wave detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a bismuth telluride-graphene heterojunction based terahertz wave detector. Bismuth telluride layer (1) Graphene (2) Semiconductor substrate (4) Heterogeneous insulating layer (5) Source (6)