• 专利标题:   Fabrication of graphene used for electrode of e.g. sandwich-style capacitor, involves providing patterned substrate, depositing graphene oxide on patterned substrate, and reducing graphene oxide to graphene.
  • 专利号:   US2021166889-A1, US11545309-B2
  • 发明人:   CHAICHI A, GARTIA M R
  • 专利权人:   CHAICHI A, GARTIA M R, UNIV LOUISIANA STATE AGRIC MECHANICA, UNIV LOUISIANA STATE AGRIC MECH COLL
  • 国际专利分类:   C01B032/192, C30B029/02, C30B033/02, H01G011/36, H01G011/86, B05D003/06
  • 专利详细信息:   US2021166889-A1 03 Jun 2021 H01G-011/36 202164 English
  • 申请详细信息:   US2021166889-A1 US169655 08 Feb 2021
  • 优先权号:   US554672P, US169655

▎ 摘  要

NOVELTY - Fabrication (100) of graphene involves providing (110) a patterned substrate, depositing (120) graphene oxide on the patterned substrate, and reducing (130) the graphene oxide to graphene. USE - Fabrication of graphene used for electrode of sandwich-style capacitor (all claimed). Can also be used for pseudocapacitor, electrical double-layer capacitor, rechargeable battery, ultrabattery, flow battery, and fuel cell. ADVANTAGE - The method produces graphene with improved spacing between graphene layers and improved level of conversion of graphene oxide to graphene, thus improving both energy density and power density of the electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of fabrication of the graphene. Graphene fabrication process (100) Patterned substrate provision process (110) Graphene oxide deposition process (120) Graphene oxide reduction process (130)