• 专利标题:   Method for performing non-contact-type Hall effect measurement of graphene migration rate of semiconductor current carrier, involves triggering projection position of electromagnetic wave, and carrying out multi-point measuring.
  • 专利号:   CN103033734-A, CN103033734-B
  • 发明人:   HAO Y, HAN D, WANG D, ZHANG J, NING J, CHAI Z, YAN Y
  • 专利权人:   UNIV XIDIAN
  • 国际专利分类:   G01R031/26, G01R019/00
  • 专利详细信息:   CN103033734-A 10 Apr 2013 G01R-031/26 201363 Pages: 9 Chinese
  • 申请详细信息:   CN103033734-A CN10593927 31 Dec 2012
  • 优先权号:   CN10593927

▎ 摘  要

NOVELTY - The method involves sensing current and a Hall current in grapheme. Radiation is measured by comparing the Hall current of an electromagnetic wave and an incident electromagnetic wave to obtain mobility of the grapheme. A projection position of the electromagnetic wave is triggered and multi-point measuring is carried out. A wafer is placed on the carrier and aligned to an electromagnetic wave emitter. A reflected energy adjusting device parameter is obtained. USE - Method for performing non-contact-type Hall effect measurement of graphene migration rate of a semiconductor current carrier. ADVANTAGE - The method enables performing non-contact electromagnetic wave measurement, thus saving measuring time and ensuring better graphene consistency, strong practicability, strong popularization and application value. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for performing non-contact-type Hall effect measurement of graphene migration rate of semiconductor current carrier. '(Drawing includes non-English language text)'