▎ 摘　　要

NOVELTY - The method involves forming a two-dimensional material composite substrate on an epitaxial substrate. A gallium nitride (GaN)-based epitaxia layer is epitaxially grown on the substrate and the two-dimethylsilyl composite substrate. The GaN-based encapsulation layer is etched into a small pattern with a specific area, where the small pattern is a square-centimeter level. A photoresist is coated on a surface of the GaN based epitaxiation layer. A hard mask is deposited on the surface of a GaN base epitaxion layer coated with a patterned photoreist. A mask pattern is formed by lift-off technology. The GNC-based Graphene nitride layer is deeply etched to a non-masking area on the surfaces of the composite substrate in the non-Masking area, and the GaN-based epitaxia layer is stripped from the substrate of the growth substrate by micromechanical stripping method. USE - Method for micromechanical stripping based on patterned gallium nitride-based epitaxial layer for high frequency, high power and high temperature applications. ADVANTAGE - The method enables realizing large area without damage by using two-dimensional material, GaN-based epitaxial layer patterning and microcomputer stripping method, and peeling off high quality GaN based epitaxially layer. The method is simple, and has good technique compatibility and low cost. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for micromechanical stripping based on patterned gallium nitride-based epitaxial layer. (Drawing includes a non-English language text)