▎ 摘　　要

NOVELTY - Preparing graphene oxide-manganese-doped zine oxide nanocomposite based humidity sensor, involves: 1) preparing graphene oxide-manganese - doped zinc oxide nanohybrid, where graphene is prepared by hummer's method, dissolving zinc acetate and manganese acetate in graphene oxide anhydrous ethanol solution, sonicating for 30 minutes, dropping solution with anhydrous ethanol slowly into graphene oxide solution, to form precursor, annealing precursor in argon gas, keeping for 2 hours, to form dark grey graphene oxide-manganese - doped zinc oxide nanocomposite powder; 2) fabricating interdigitated electrodes, where silica layer is grown on silicon substrate, further cleaning the wafer, to remove oxide layer, then depositing 100 micron thick gold; and 3) dicing sensor into 6 mm x 3 mm and adding 5 micron grey graphene oxide- manganese - doped zinc oxide nanocomposite powder mixed with deionized water and drop casting on fabricated sensors. USE - Method is used for preparing graphene oxide-manganese-doped zine oxide nanocomposite- based humidity sensor. ADVANTAGE - The method enables to prepare sensors with improved sensitivity, response time and enhanced stability, in a cost-effective manner, and is suitable for bulk production. DETAILED DESCRIPTION - Preparing graphene oxide-manganese-doped zine oxide nanocomposite based humidity sensor, involves: 1) preparing graphene oxide-manganese - doped zinc oxide nanohybrid, where the graphene is prepared by hummer's method, followed by dissolving 2.2 g zinc acetate and 0.272 g manganese acetate (molar ratio of manganese to zinc is 0.1: 0.9) in graphene oxide anhydrous ethanol solution (0.6 g/l), stirring and sonicating for 30 minutes, the solution contains oxalic acid and metal ion in molar ratio 1:1, dropping the solution with 55 ml anhydrous ethanol slowly into graphene oxide solution at 50°C, to produce a precursor, annealing precursor in argon gas from room temperature to 600°C, at the rate 5°C/minute, keeping for 2 hours, to form a dark grey graphene oxide-manganese - doped zinc oxide nanocomposite powder with less than 2% manganese as dopant; 2) fabricating interdigitated electrodes (IDE) with 28 fingers by metal etching, where silicon substrate of 4 inch diameter on which 1 micron thick silica layer is grown, by means of thermal oxidation technique at 1000°C for 4 hours, by dry and wet oxidation, respectively, further cleaning the wafer with trichloroethylene, isopropyl alcohol and acid cleaning with nitric acid and hydrofluoric acid, to remove oxide layer formed in atmospheric condition and then depositing 100 micron thick gold by means of thermal evaporation, where the thickness is 98nm and roughness is less than 2 nm; and 3) dicing the sensor into 6 mm x 3 mm and adding 5 micro grey graphene oxide- manganese - doped zinc oxide nanocomposite powder mixed with deionized water and drop casting on fabricated sensors, where the electrical connections are provided by silver conductive paste and sensor device are mounted on copper-toned FR-4 board.