▎ 摘　　要

NOVELTY - Preparation of graphene on the surface of silicon carbide, involves subjecting a silicon carbide crystal with a crystallographic orientation of the surface (0001) to (a) a pressure below 1x 10-9 mbar, (b) optionally annealing at 300-900 degrees C under a pressure not more than 1x 10-8 mbar, (c) optionally annealing at 900-1050 degrees C in a stream of silicon atoms from an external sublimation source providing a nominal silicon growth rate at 0.5-2.5 Angstrom /minute, and (d) annealing at 1300-1800 degrees C, under a pressure not more than 5x 10-7 mbar, in a stream of silicon atoms from an external sublimation. USE - Preparation of graphene on surface of silicon carbide (claimed). ADVANTAGE - The method effectively produces high quality graphene with reduced impurities and devoid of crystal defects such as vacancies, dislocations or intergranular boundaries. DETAILED DESCRIPTION - Preparation of graphene on the surface of silicon carbide, involves subjecting a silicon carbide crystal with a crystallographic orientation of the surface(0001) to (a) a pressure below 1x 10-9 mbar, (b) optionally annealing at 300-900 degrees C under a pressure not more than 1x 10-8 mbar, (c) optionally annealing at 900-1050 degrees C in a stream of silicon atoms from an external sublimation source providing a nominal silicon growth rate at 0.5-2.5 Angstrom /minute, and (d) annealing at 1300-1800 degrees C, under a pressure not more than 5x 10-7 mbar, in a stream of silicon atoms from an external sublimation source providing a nominal silicon growth rate at 0.5-10 Angstrom /minute. An INDEPENDENT CLAIM is included for layer of graphene on the surface of the silicon carbide crystal, which comprises 1-4, preferably 1-2 atomic layers forming a crystal lattice with a honeycomb structure. The graphene on the silicon carbide surface (0001) has a diffraction spectrum obtained by low-energy electron diffraction having a typical diffraction pattern on the silicon carbide surface (0001). The signal to noise ratio (SNR) of the maximum signal intensity to the minimum signal intensity is more than 9, as measured at room temperature, in the section between the two consecutive diffraction maxima connected with graphene.