• 专利标题:   Assembling and synthesizing graphene, comprises introducing transition metal into high temperature section of furnace, allowing substrate material in low temperature region and then vacuumizing and introducing hydrogen gas into furnace.
  • 专利号:   CN102849733-A, CN102849733-B
  • 发明人:   ZHANG C, MAN B, YANG C
  • 专利权人:   UNIV SHANDONG NORMAL
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN102849733-A 02 Jan 2013 C01B-031/04 201343 Pages: 9 Chinese
  • 申请详细信息:   CN102849733-A CN10360986 25 Sep 2012
  • 优先权号:   CN10360986

▎ 摘  要

NOVELTY - Assembling and synthesizing graphene, comprises arranging a vacuum reaction furnace into high temperature region and a low temperature region, introducing transition metal into the high temperature section of the furnace, allowing substrate material in the low temperature region and then vacuumizing and introducing hydrogen gas into the furnace, raising the temperature at low and high temperature areas, entering carbon source in the low-temperature region for chemical vapor deposition by cracking the high temperature area, and keeping hydrogen flow rate not changed to obtain a substrate. USE - The method is useful for assembling and synthesizing graphene (claimed). ADVANTAGE - The method allows simple synthesis of graphene with high quality and excellent light transmittance and conductivity in a controlled manner. DETAILED DESCRIPTION - Assembling and synthesizing graphene, comprises arranging a vacuum reaction furnace into high temperature region and a low temperature region of 100-1000 degrees C to 1000-1100 degrees C, introducing transition metal into the high temperature section of the vacuum reaction furnace, directly allowing substrate material in the low temperature region and then vacuumizing and introducing hydrogen gas into the vacuum reaction furnace, raising the temperature at low temperature area and high temperature area, entering carbon source in the low-temperature region for chemical vapor deposition by cracking the high temperature area, and keeping hydrogen flow rate not changed to obtain a substrate for depositing the polysilicon film directly on the graphene after 5-180 minutes. An INDEPENDENT CLAIM is included for a double-temperature area tube-type furnace, comprising a quartz tube including an air inlet and an air outlet, where: the air inlet is connected with a gas flow meter and a vacuum meter; the air outlet is provided with a valve; the quartz tube is divided into a high temperature section and a low temperature region; and the high temperature region and a low temperature region are provided with a heating pipe.