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  • 专利标题:   Graphene doping involves forming polymethyl methacrylate film on graphene device, selecting doping graphene region and introducing graphene to selected region with electroconductive needle through atom force microscope.
  • 专利号:   CN104217931-A
  • 发明人:   QIU X, WANG X, WANG R, XU Y, CHENG Z, JIANG X
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   H01L021/22, H01L029/167
  • 专利详细信息:   CN104217931-A 17 Dec 2014 H01L-021/22 201513 Pages: 11 Chinese
  • 申请详细信息:   CN104217931-A CN10206633 29 May 2013
  • 优先权号:   CN10206633

▎ 摘　　要

NOVELTY - A polymethyl methacrylate film is formed on a surface layer of a graphene device. The doping graphene region is selected. The graphene is introduced to selected region with electroconductive needle through atom force microscope. Thus, graphene doping is carried out. USE - Graphene doping (claimed). ADVANTAGE - The method enables graphene doping in different shapes. The doping concentration during graphene doping is continuously controlled and adjusted.